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Real-time detection of cardiac troponin I and mechanism analysis of AlGaAs/GaAs high electron mobility transistor biosensor

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单位: [1]Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China [2]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China [3]Department of Cardiology, Peking University People’s Hospital, Beijing 100044, People’s Republic of China [4]China-Japan Friendship Hospital, Beijing 100029, People’s Republic of China
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The high electron mobility transistor (HEMT)-based biosensors are highly competitive in the ultimate application of portable and point-of-care testing. Herein, we have demonstrated highly sensitive and real-time detection of cardiac troponin I (cTnI), a biomarker for the diagnosis of acute myocardial infarction (AMI) using AlGaAs/GaAs HEMT-based biosensors. The device has achieved a lower detection limit of 1 pg/ml in the buffer solution and less than 30 s response time, which demonstrated significant promise in the early diagnosis and screening of AMI. In addition, our results are consistent with the enzyme-linked immunosorbent assay according to the AMI patient's blood test results. Furthermore, by comparing the two HEMT structures, we also calculated the equilibrium dissociation constant (K-D) of the cTnI and cTnI antibody and analyzed the sensing mechanism. The results show that this method is very promising for early diagnosis of AMI.

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出版当年[2019]版:
大类 | 4 区 工程技术
小类 | 4 区 材料科学:综合 4 区 纳米科技 4 区 物理:应用
最新[2025]版:
大类 | 4 区 综合性期刊
小类 | 4 区 综合性期刊
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出版当年[2018]版:
Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Q3 PHYSICS, APPLIED Q4 NANOSCIENCE & NANOTECHNOLOGY
最新[2023]版:
Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Q4 NANOSCIENCE & NANOTECHNOLOGY Q4 PHYSICS, APPLIED

影响因子: 最新[2023版] 最新五年平均[2021-2025] 出版当年[2018版] 出版当年五年平均[2014-2018] 出版前一年[2017版] 出版后一年[2019版]

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第一作者单位: [1]Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China [2]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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通讯机构: [1]Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China [2]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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