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Electrochemical DNA Biosensors Based on the Intrinsic Topological Insulator BiSbTeSe2 for Potential Application in HIV Determination

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单位: [1]Beijing Inst Technol, Sch Phys, Ctr Quantum Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Beijing 100081, Peoples R China [2]Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China [3]Yangtze Delta Reg Acad Beijing Inst Technol, Jiaxing 314019, Peoples R China [4]China Japan Friendship Hosp, Dept Rheumatol, Beijing 100029, Peoples R China [5]Sch Chem & Chem Engn, Beijing Inst Technol, Key Lab Med Mol Sci & Pharmaceut Engn, Minist Ind & Informat Technol, Beijing 100081, Peoples R China [6]Beijing Inst Technol, Expt Ctr Adv Mat, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
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关键词: label-free topological insulator BiSbTeSe2 electrochemical biosensor differential pulse voltammetry

摘要:
In this work, we reported a sensitive, label-free electrochemical biosensor based on the intrinsic topological insulator (TI) BiSbTeSe2 for potential application in the determination of the HIV gene. With strong spin-obit coupling, TIs could have robust surface states with low electronic noise, which might be beneficial for the stable and sensitive electron transport between the electrode and electrolyte interface. Under optimized conditions of the biosensors using BiSbTeSe2, the differential pulse voltammetry (DPV) peak currents showed a linear relationship with the logarithm of target DNA concentrations ranging from 1.0 x 10(-13) to 1.0 x 10(-7) M, with a detection limit of 1.07 x 10(-15) M. The sensing assay also displayed good selectivity and stability after storage at 4 degrees C for 7 days. This work provides an effective way to develop biosensors with topological materials, which have a potential application in the clinical determination and monitoring field.

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出版当年[2021]版:
最新[2025]版:
大类 | 3 区 材料科学
小类 | 4 区 材料科学:生物材料 4 区 纳米科技
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出版当年[2020]版:
最新[2023]版:
Q2 MATERIALS SCIENCE, BIOMATERIALS Q2 NANOSCIENCE & NANOTECHNOLOGY

影响因子: 最新[2023版] 最新五年平均[2021-2025] 出版当年[2020版] 出版当年五年平均[2016-2020] 出版前一年[2019版]

第一作者:
第一作者单位: [1]Beijing Inst Technol, Sch Phys, Ctr Quantum Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Beijing 100081, Peoples R China [2]Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China [3]Yangtze Delta Reg Acad Beijing Inst Technol, Jiaxing 314019, Peoples R China
通讯作者:
通讯机构: [1]Beijing Inst Technol, Sch Phys, Ctr Quantum Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Beijing 100081, Peoples R China [2]Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China [3]Yangtze Delta Reg Acad Beijing Inst Technol, Jiaxing 314019, Peoples R China [*1]Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics and Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China [*2]Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
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